US-Lasers: 840nm-5mW - Infrared Laser Diodes

 

  Back to Laser Diodes    
     

INFRARED DIODE LASER DATA SHEETS           ABSOLUTE MAXIMUM RATINGS - (Tc=25 °C)

TECHNICAL DATA for LASER DIODE
  • Index Guided MQW Structure
  • Wavelength: 840nm (Typ.)
  • Optical Power: 5mW CW
  • Threshold Current: 20mA (Typ.)
  • Standard Package: 5.6mm

Infrared light output      840nm

Pin Out Diagram - Style A

Optical power output   5mW CW
Package Type             5.6mm
Built-in photo diode for monitoring laser output
Items

Symbols

Values

Unit

Optical output power

Po

5

mW

Laser diode reverse voltage

VLDR

2

V

Photo diode reverse voltage

VPDR

30

V

Operating temperature

Topr

-10 ~ +40

°C

Storage temperature

Tstg

-40 ~ +85

°C

OPTICAL and ELECTRICAL CHARACTERISTICS - (Tc=25 ºC)

Items

Symbols

Min.

Typ.

Max.

Unit

Test Condition

Optical output power

Po

-

5

-

mW

-

Threshold current

Ith

10

20

35

mA

-

Operating current

Iop

15

25

45

mA

Po=5mW

Operating voltage

Vop

2.0

2.4

2.7

V

Po=5mW

Lasing wavelength

8 D

830

840

850

nm

Po=5mW

Beam divergence

q F

8

10

11

deg

Po=5mW

Beam divergence

q z

25

31

40

deg

Po=5mW

Slope Efficiency (mW/mA)

0

0.4

0.5

0.7

-

Monitor current

Im

10

100

200

m A

Po=5mW,Vr=5V

Astigmatism

As

-

11

-

m m

Po=5mW

MTTF

3000-5,000 hrs.

Po=5mW,NA=0.4

Emitter Size 1 x 4 Microns
Emitter Distance to Cap Lens 0.3mm
Structure  Index Guided