US-Lasers: 808nm-30mW - Infrared Laser Diode

 

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INFRARED LASER DIODE DATA SHEETS           ABSOLUTE MAXIMUM RATINGS - (Tc=25 °C)

TECHNICAL DATA for LASER DIODE
  • Index Guided MQW Structure
  • Wavelength: 808nm (Typ.)
  • Optical Power: 30mW CW
  • Threshold Current: 25mA (Typ.)
  • Standard Package: 9mm

Infrared light output      808nm

Pin Out Diagram - Style A

Optical power output   30mW CW
Package Type             9mm
Built-in photo diode for monitoring laser output
Items

Symbols

Values

Unit

Optical output power

Po

30

mW

Laser diode reverse voltage

VLDR

2

V

Photo diode reverse voltage

VPDR

30

V

Operating temperature

Topr

-10 ~ +40

°C

Storage temperature

Tstg

-40 ~ +85

°C

OPTICAL and ELECTRICAL CHARACTERISTICS - (Tc=25 ºC)

Items

Symbols

Min.

Typ.

Max.

Unit

Test Condition

Optical output power

Po

-

30

-

mW

-

Threshold current

Ith

15

25

40

mA

-

Operating current

Iop

30

40

60

mA

Po=30mW

Operating voltage

Vop

2.0

2.4

2.7

V

Po=30mW

Lasing wavelength

8 D

800

808

820

nm

Po=30mW

Beam divergence

q F

8

10

11

deg

Po=30mW

Beam divergence

q z

25

31

40

deg

Po=30mW

Slope Efficiency (mW/mA)

0

0.4

0.5

0.7

-

Monitor current

Im

0.1

0.3

0.6

m A

Po=30mW,Vr=5V

Astigmatism

As

-

11

-

m m

Po=30mW

MTTF

10,000 hrs.

Po=30mW,NA=0.4

Emitter Size 1 x 4 Microns
Emitter Distance to Cap Lens 0.3mm
Structure  Index Guided