US-Lasers: 850nm-30mW - Infrared Laser Diode

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IR LASER DIODE DATA SHEET           ABSOLUTE MAXIMUM RATINGS - (Tc=25 °C)

TECHNICAL DATA
IR light output       850nm
Optical power output  30mW CW
Package Type             5.6mm
Built-in photo diode for monitoring laser output
Pin Out Diagram
Items Symbols Values Unit
Optical output power Po 30 mW
Laser diode reverse voltage V 2 V
Photo diode reverse voltage V 30 V
Operating temperature Topr -10 ~ +50 °C
Storage temperature Tstg -40 ~ +85 °C
OPTICAL and ELECTRICAL CHARACTERISTICS - (Tc=25 ºC)
Items Symbols Min. Typ. Max. Unit Test Condition
Optical output power Po - 30 - mW -
Threshold current Ith 30 50 70 mA Po=30mW
Operating current Iop 60 80 100 mA Po=30mW
Operating voltage Vop 2.0 2.2 2.7 V Po=30mW
Lasing wavelength ep 830 850 870 nm Po=30mW
Beam divergence 8 10 11 deg Po=30mW
Beam divergence 25 31 40 deg Po=30mW
Monitor current Im 100 300 500 uA Po=30mW
Astigmatism As - 11 - um Po=30mW
Slope Efficiency (mW/mA) 0.3 0.4 0.7 Po=30mW
MTTF 10000 hrs. Po=30mW
Emitter Size 10 x 60 Microns - Emitter Distance to Cap Lens = 0.3mm
Structure Index Guided